Phonon scattering and exciton localization: molding exciton flux in two dimensional disorder energy landscape

Pengfei Qi; Yang Luo; Beibei Shi; Wei Li; Donglin Liu; Liheng Zheng; Zhixin Liu; Yanglong Hou; Zheyu Fang

doi:10.1186/s43593-021-00006-8

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Phonon scattering and exciton localization: molding exciton flux in two dimensional disorder energy landscape

eLight Vol. 1, Issue 1, Pages: 1-6(2021)

RESEARCH ARTICLE | Updated：2021-12-10

- Phonon scattering and exciton localization: molding exciton flux in two dimensional disorder energy landscape
- Affiliations：
  
  School of Physics, State Key Laboratory for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, Nano-Optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing 100871, China
  Institute of Modern Optics, Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin 300350, China
  Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Centre for Engineering Science and Advanced Technology, Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
- Author bio：
  
  *zhyfang@pku.edu.cn
- Funds：
- DOI：10.1186/s43593-021-00006-8
  CLC：
- Published：2021-12，
  
  Published Online：08 November 2021，
  
  Received：13 April 2021，
  
  Revised：04 October 2021，
  
  Accepted：05 October 2021
- Accepted：
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Pengfei Qi, Yang Luo, Beibei Shi, et al. Phonon scattering and exciton localization: molding exciton flux in two dimensional disorder energy landscape. [J]. eLight, 2021,1(1):1-6.
DOI：

Pengfei Qi, Yang Luo, Beibei Shi, et al. Phonon scattering and exciton localization: molding exciton flux in two dimensional disorder energy landscape. [J]. eLight, 2021,1(1):1-6. DOI： 10.1186/s43593-021-00006-8.

摘要

Abstract

Two dimensional excitonic devices are of great potential to overcome the dilemma of response time and integration in current generation of electron or/and photon based systems. The ultrashort diffusion length of exciton arising from ultrafast relaxation and low carrier mobility greatly discounts the performance of excitonic devices. Phonon scattering and exciton localization are crucial to understand the modulation of exciton flux in two dimensional disorder energy landscape

which still remain elusive. Here

we report an optimized scheme for exciton diffusion and relaxation dominated by phonon scattering and disorder potentials in WSe

monolayers. The effective diffusion coefficient is enhanced by

200% at 280 K. The excitons tend to be localized by disorder potentials accompanied by the steadily weakening of phonon scattering when temperature drops to 260 K

and the onset of exciton localization brings forward as decreasing temperature. These findings identify that phonon scattering and disorder potentials are of great importance for long-range exciton diffusion and thermal management in exciton based systems

and lay a firm foundation for the development of functional excitonic devices.

关键词

Keywords

Exciton diffusionExciton relaxation2D semiconductorsPhonon scatteringDisorder potentials

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