Lead halide perovskite sensitized WSe<sub>2</sub> photodiodes with ultrahigh open circuit voltages

Sung-Joon Lee; Hung-Chieh Cheng; Yiliu Wang; Boxuan Zhou; Dehui Li; Gongming Wang; Yuan Liu; Jian Guo; Hao Wu; Dae Joon Kang; Yu Huang; Xiangfeng Duan

doi:10.1186/s43593-023-00040-8

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Lead halide perovskite sensitized WSe₂ photodiodes with ultrahigh open circuit voltages

eLight Vol. 3, Issue 1, (2023)

LETTER | Updated：2024-09-25

- Lead halide perovskite sensitized WSe₂ photodiodes with ultrahigh open circuit voltages
- Affiliations：
  
  Department of Materials Science and Engineering, University of California, Los Angeles, CA, USA
  Department of Physics, Sungkyunkwan University, Suwon, Republic of Korea
  Department of Chemistry and Biochemistry, University of California, Los Angeles, CA, USA
  Present Address: Materials Science and Technology Division, U.S. Naval Research Laboratory, Washington, DC, USA
- Author bio：
  
  *Dae Joon Kangdjkang@skku.edu
  Yu Huangyhuang@seas.ucla.edu
  Xiangfeng Duanxduan@chem.ucla.edu
- Funds：
- DOI：10.1186/s43593-023-00040-8
  CLC：
- Published：2023，
  
  Published Online：10 April 2023，
  
  Received：18 November 2022，
  
  Revised：18 January 2023，
  
  Accepted：14 February 2023
- Accepted：
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Sung-Joon Lee, Hung-Chieh Cheng, Yiliu Wang, et al. Lead halide perovskite sensitized WSe₂ photodiodes with ultrahigh open circuit voltages. [J]. eLight, 2023,3(1).
DOI：

Sung-Joon Lee, Hung-Chieh Cheng, Yiliu Wang, et al. Lead halide perovskite sensitized WSe₂ photodiodes with ultrahigh open circuit voltages. [J]. eLight, 2023,3(1). DOI： 10.1186/s43593-023-00040-8.

摘要

Abstract

Two-dimensional semiconductors (2DSCs) have attracted considerable interests for optoelectronic devices

but are often plagued by the difficulties in tailoring the charge doping type and poor optical absorption due to their atomi-cally thin geometry. Herein

we report a methylammonium lead iodide perovskite (CH

PbI

)/2DSC heterojunction device

in which the electric-field controllable ion migration in the perovsk

ite layer is exploited to induce reversible electron- and hole-doping effects in the underlying monolayer tungsten diselenide (WSe

) to form a programmable p-n photodiode. At the same time

the CH

PbI

layer functions as a highly efficient sensitization layer to greatly boost the optical absorption and external quantum efficiency (EQE) of the resulting photodiode. By asymmetrically poling the perovskite layer

gold-contacted CH

PbI

/WSe

devices show a switchable open circuit voltage up to 0.78 V

along with a high EQE of 84.3%. The integration of tunable graphene-contacts further improves the photodiode performance to achieve a highest open circuit voltage of 1.08 V and a maximum EQE of 91.3%

greatly exceeding those achieved previously in 2DSC lateral diodes. Our studies establish a non-invasive approach to switch optoelectronic functions and open up a new avenue toward high-performance reconfigurable optoelectronic devices from 2DSCs.

关键词

Keywords

Electrostatic dopingProgrammable optoelectronic devicesLead halide perovskiteTwo-dimensional materialsIon migrationPhotodiodes

references

J. Williams, L. DiCarlo, C. Marcus, Quantum Hall effect in a gate-controlled p-n junction of graphene. Science317, 638-641 (2007)

N.M. Gabor et al., Hot carrier-assisted intrinsic photoresponse in gra-phene. Science334, 648-652 (2011)

W.J. Yu, B.R. Kang, I.H. Lee, Y.S. Min, Y.H. Lee, Majority carrier type conversion with floating gates in carbon nanotube transistors. Adv. Mater. 21, 4821-4824 (2009)

Y. Wang et al., Structural phase transition in monolayer MoTe2 driven by electrostatic doping. Nature550, 487-491 (2017)

H. Zhou, Y. Du, P.D. Ye, Ionic liquid gating on atomic layer deposition pas-sivated GaN: ultra-high electron density induced high drain current and low contact resistance. Appl. Phys. Lett. 108, 202102 (2016)

M.E. Beck, M.C. Hersam, Emerging opportunities for electrostatic control in atomically thin devices. ACS Nano14, 6498-6518 (2020)

S. Jiang, L. Li, Z. Wang, K.F. Mak, J. Shan, Controlling magnetism in 2D CrI3 by electrostatic doping. Nat. Nanotechnol. 13, 549-553 (2018)

S. Liu et al., Room-temperature valley polarization in atomically thin semiconductors via chalcogenide alloying. ACS Nano14, 9873-9883 (2020)

A.Y. Joe et al., Electrically controlled emission from singlet and triplet exciton species in atomically thin light-emitting diodes. Phys. Rev. B103, L161411 (2021)

T. Roy et al., Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors. ACS Nano9, 2071-2079 (2015)

J. W. Mayer, Ion implantation in semiconductors. 1973 International Electron Devices Meeting, 3-5 (1973)

K. Zhang et al., Manganese doping of monolayer MoS2: the substrate is critical. Nano Lett.15, 6586-6591 (2015)

S.-J. Lee et al., Programmable devices based on reversible solid-state doping of two-dimensional semiconductors with superionic silver iodide. Nat. Electron3, 630-637 (2020)

J.S. Ross et al., Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions. Nat. Nanotechnol. 9, 268-272 (2014)

B.W. Baugher, H.O. Churchill, Y. Yang, P. Jarillo-Herrero, Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichal-cogenide. Nat. Nanotechnol. 9, 262-267 (2014)

A. Pospischil, M.M. Furchi, T. Mueller, Solar-energy conversion and light emission in an atomic monolayer pn diode. Nat. Nanotechnol. 9, 257-261(2014)

H.-P. Komsa et al., Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping. Phys. Rev. Lett.109, 035503 (2012)

J. Shim et al., Recent progress in Van der Waals (vdW) heterojunction-based electronic and optoelectronic devices. Carbon133, 78-89 (2018)

Y. Wang, Y. Zheng, C. Han, W. Chen, Surface charge transfer doping for two-dimensional semiconductor-based electronic and optoelectronic devices. Nano Res.14, 1682-1697 (2021)

A. Rasmita, W.-B. Gao, Opto-valleytronics in the 2D van der Waals hetero-structure. Nano Res.14, 1901-1911 (2021)

S.H. Yu et al., Dye-sensitized MoS2 photodetector with enhanced spectral photoresponse. ACS Nano8, 8285-8291 (2014)

J.-W. Lee et al., Solid-phase hetero epitaxial growth of α-phase formami-dinium perovskite. Nat. Commun. 11, 5514 (2020)

Z. Fan et al., Layer-by-layer degradation of methylammonium lead tri-iodide perovskite microplates. Joule1, 548-562 (2017)

Z. Xiao et al., Giant switchable photovoltaic effect in organometal trihal-ide perovskite devices. Nat. Mater. 14, 193-198 (2015)

G. Tumen-Ulzii et al., Hysteresis-less and stable perovskite solar cells with a self-assembled monolayer. Commun. Mater. 1, 31 (2020)

S. Tan et al., Steric impediment of ion migration contributes to improved operational stability of perovskite solar cells. Adv. Mater. 32, 1906995(2020)

J. Jiang et al., Rational design of Al2O3/2D perovskite heterostructure dielectric for high performance MoS2 phototransistors. Nat. Commun. 11,4266 (2020)

J.-W. Lee, H.-S. Kim, N.-G. Park, Lewis acid-base adduct approach for high efficiency perovskite solar cells. Acc. Chem. Res. 49, 311-319 (2016)

C. Eames et al., Ionic transport in hybrid lead iodide perovskite solar cells.Nat. Commun.6, 7497 (2015)

Y.-H. Kim et al., Comprehensive defect suppression in perovskite nanocrystals for high-efficiency light-emitting diodes. Nat. Photonics15,148-155 (2021)

Y. Liu et al., Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions. Nature557, 696-700 (2018)

H.-J. Chuang et al., High mobility WSe2 p-and n-type field-effect transistors contacted by highly doped graphene for low-resistance contacts. Nano Lett.14,3594-3601 (2014)

C. Sandroff, S. Kelty, D. Hwang, Clusters in solution: growth and optical properties of layered semiconductors with hexagonal and honeycombed structures. J. Chem. Phys. 85, 5337-5340 (1986)

R. Cheng et al., High-frequency self-aligned graphene transistors with transferred gate stacks. Proc. Natl. Acad. Sci. 109, 11588-11592 (2012)

Q. Chen et al., Planar heterojunction perovskite solar cells via vapor-assisted solution process. J. Am. Chem. Soc. 136, 622-625 (2014)

H.-C. Cheng et al., van der Waals heterojunction devices based on organohalide perovskites and two-dimensional materials. Nano Lett.16,367-373 (2016)

G. Wang et al., Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics. Sci. Adv. 1,e1500613 (2015)

D. He et al., High-performance black phosphorus field-effect transistors with long-term air stability. Nano Lett.19, 331-337 (2019)

Z. Qin et al., Incorporation of two-dimensional WSe2 into MAPbI3 perovskite for efficient and stable photovoltaics. J. Phys. Chem. Lett. 12, 6883-6888 (2021)

Q. Fu et al., Ultrathin Ruddlesden-Popper perovskite heterojunction for sensitive photodetection. Small15, 1902890 (2019)

E.L. Unger et al., Hysteresis and transient behavior in current-voltage measurements of hybrid-perovskite absorber solar cells. Energy Environ. Sci. 7, 3690-3698 (2014)

D.H. Kang et al., High-performance transition metal dichalcogenide pho-todetectors enhanced by self-assembled monolayer doping. Adv. Func. Mater. 25, 4219-4227 (2015)

D. Li et al., Electronic and ionic transport dynamics in organolead halide perovskites. ACS Nano10, 6933-6941 (2016)

Y. Zhang, T. Oka, R. Suzuki, J. Ye, Y. Iwasa, Electrically switchable chiral light-emitting transistor. Science344, 725-728 (2014)

C.-L. Wu et al., Gate-induced metal-insulator transition in MoS2 by solid superionic conductor LaF3. Nano Lett.18, 2387-2392 (2018)

P. Chen et al., Approaching the intrinsic exciton physics limit in two-dimensional semiconductor diodes. Nature599, 404-410 (2021)

B. Peng et al., Achieving ultrafast hole transfer at the monolayer MoS2 and CH3NH3PbI3 perovskite interface by defect engineering. ACS Nano10,6383-6391 (2016)

Y. Wang et al., Solution-processed MoS2/organolead trihalide perovskite photodetectors. Adv. Mater. 29, 1603995 (2017)

J. Lu et al., Hybrid bilayer WSe2-CH3NH3PbI3 organolead halide perovskite as a high-performance photodetector. Angew. Chem. 128, 12124-12128(2016)

G. Xing et al., Long-range balanced electron-and hole-transport lengths in organic-inorganic CH3NH3PbI3. Science342, 344-347 (2013)

W.J. Yu et al., Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters. Nat. Mater. 12, 246-252 (2013)

Y. Liu et al., Toward barrier free contact to molybdenum disulfide using graphene electrodes. Nano Lett.15, 3030-3034 (2015)

W.J. Yu et al., Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials. Nat. Nanotechnol. 8, 952-958 (2013)

X. Cui et al., Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. Nat. Nanotechnol. 10, 534-540 (2015)

E. Del Corro et al., Excited excitonic states in 1L, 2L, 3L, and bulk WSe2 observed by resonant Raman spectroscopy. ACS Nano8, 9629-9635 (2014)

D.J. Groenendijk et al., Photovoltaic and photothermoelectric effect in a double-gated WSe2 device. Nano Lett.14, 5846-5852 (2014)

M. Massicotte et al., Dissociation of two-dimensional excitons in mon-olayer WSe2. Nat. Commun. 9, 1633 (2018)

M.S. Choi et al., Lateral MoS2 p-n junction formed by chemical doping for use in high-performance optoelectronics. ACS Nano8, 9332-9340 (2014)

H. Wang et al., Approaching the external quantum efficiency limit in 2D photovoltaic devices. Adv. Mater. 34, 2206122 (2022)

S. Wi et al., High blue-near ultraviolet photodiode response of vertically stacked graphene-MoS2-metal heterostructures. Appl. Phys. Lett. 104,232103 (2014)

F. Wu et al., High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region. Nat. Commun. 10, 4663 (2019)

C. Fang et al., High-performance photodetectors based on lead-free 2D Ruddlesden-Popper perovskite/MoS2 heterostructures. ACS Appl. Mater.Interfaces. 11, 8419-8427 (2019)

Z.-X. Zhang et al., Ultrafast, self-driven, and air-stable photodetectors based on multilayer PtSe2/perovskite heterojunctions. J. Phys. Chem. Lett.9, 1185-1194 (2018)

Y. Chen et al., High-performance photovoltaic detector based on MoTe2/MoS2 van der Waals heterostructure. Small14, 1703293 (2018)

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Lead halide perovskite sensitized WSe2 photodiodes with ultrahigh open circuit voltages

DOI：10.1186/s43593-023-00040-8

摘要

Abstract

关键词

Keywords

references

Lead halide perovskite sensitized WSe₂ photodiodes with ultrahigh open circuit voltages