In-situ neutron-transmutation for substitutional doping in 2D layered indium selenide based phototransistor

Zhinan Guo; Yonghong Zeng; Fanxu Meng; Hengze Qu; Shengli Zhang; Shipeng Hu; Sidi Fan; Haibo Zeng; Rui Cao; Paras N. Prasad; Dianyuan Fan; Han Zhang

doi:10.1186/s43593-022-00017-z

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In-situ neutron-transmutation for substitutional doping in 2D layered indium selenide based phototransistor

光：快讯（英文） 2022年2卷第1期

Research Article | Updated：2024-09-28

- In-situ neutron-transmutation for substitutional doping in 2D layered indium selenide based phototransistor
- In-situ neutron-transmutation for substitutional doping in 2D layered indium selenide based phototransistor
- Affiliations：
  
  Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
  MIIT Key Laboratory of Advanced Display Materials and Devices, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
  Institute for Lasers, Photonics, and Biophotonics and Department of Chemistry, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA
- Author bio：
  
  *Paras N. Prasadpnprasad@buffalo.edu
  Han Zhanghzhang@szu.edu.cn
- Funds：
  
  the State Key Research Development Program of China(2019YFB2203503);National Natural Science Fund(61875138;61961136001;62104153;62105211;U1801254);Natural Science Foundation of Guangdong Province(2018B030306038;2020A1515110373);Science and Technology Innovation Commission of Shenzhen(JCYJ20180507182047316;20200805132016001);Postdoctoral Science Foundation of China(2021M702237)
- DOI：10.1186/s43593-022-00017-z
  中图分类号：
- 纸质出版日期：2022-12，
  
  网络出版日期：2022-06-06，
  
  收稿日期：2022-03-04，
  
  修回日期：2022-04-10，
  
  录用日期：2022-04-18
- Accepted：
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In-situ neutron-transmutation for substitutional doping in 2D layered indium selenide based phototransistor[J]. 光：快讯（英文）, 2022,2(1).

Zhinan Guo, Yonghong Zeng, Fanxu Meng, et al. In-situ neutron-transmutation for substitutional doping in 2D layered indium selenide based phototransistor[J]. eLight, 2022,2(1).
In-situ neutron-transmutation for substitutional doping in 2D layered indium selenide based phototransistor[J]. 光：快讯（英文）, 2022,2(1). DOI： 10.1186/s43593-022-00017-z.

Zhinan Guo, Yonghong Zeng, Fanxu Meng, et al. In-situ neutron-transmutation for substitutional doping in 2D layered indium selenide based phototransistor[J]. eLight, 2022,2(1). DOI： 10.1186/s43593-022-00017-z.

摘要

Abstract

Neutron-transmutation doping (NTD) has been demonstrated for the first time in this work for substitutional introduction of tin (Sn) shallow donors into two-dimensional (2D) layered indium selenide (InSe) to manipulate electron transfer and charge carrier dynamics. Multidisciplinary study including density functional theory

transient optical absorption

and FET devices have been carried out to reveal that the field effect electron mobility of the fabricated phototransistor is increased 100-fold due to the smaller electron effective mass and longer electron life time in the Sndoped InSe. The responsivity of the Sn-doped InSe based phototransistor is accordingly enhanced by about 50 times

being as high as 397 A/W. The results show that NTD is a highly effective and controllable doping method

possessing good compatibility with the semiconductor manufacturing process

even after device fabrication

and can be carried out without introducing any contamination

which is radically different from traditional doping methods.

关键词

Keywords

Neutron-transmutation dopingSubstitutional dopingTwo-dimensional materialsPhototransistor

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