Metal Halide Perovskite for next-generation optoelectronics: progresses and prospects

He Dong; Chenxin Ran; Weiyin Gao; Mingjie Li; Yingdong Xia; Wei Huang

doi:10.1186/s43593-022-00033-z

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Metal Halide Perovskite for next-generation optoelectronics: progresses and prospects

光：快讯（英文） 2023年3卷第1期

REVIEW | Updated：2024-09-25

- Metal Halide Perovskite for next-generation optoelectronics: progresses and prospects
- Metal Halide Perovskite for next-generation optoelectronics: progresses and prospects
- Affiliations：
  
  Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, Xi'an 710072, China
  Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
  Key Laboratory for Organic Electronics & Information Displays (KLOEID), and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, Jiangsu, China
  Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon 999077, Hong Kong, China
  Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen 518057, Guangdong, China
- Author bio：
  
  *iamcxran@nwpu.edu.cn;
  iamydxia@njtech.edu.cn;
  iamdirector@fudan.edu.cn
- Funds：
- DOI：10.1186/s43593-022-00033-z
  中图分类号：
- 纸质出版日期：2023，
  
  网络出版日期：2023-01-04，
  
  收稿日期：2022-08-08，
  
  修回日期：2022-09-16，
  
  录用日期：2022-09-19
- Accepted：
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Metal Halide Perovskite for next-generation optoelectronics: progresses and prospects[J]. 光：快讯（英文）, 2023,3(1).

He Dong, Chenxin Ran, Weiyin Gao, et al. Metal Halide Perovskite for next-generation optoelectronics: progresses and prospects[J]. eLight, 2023,3(1).
Metal Halide Perovskite for next-generation optoelectronics: progresses and prospects[J]. 光：快讯（英文）, 2023,3(1). DOI： 10.1186/s43593-022-00033-z.

He Dong, Chenxin Ran, Weiyin Gao, et al. Metal Halide Perovskite for next-generation optoelectronics: progresses and prospects[J]. eLight, 2023,3(1). DOI： 10.1186/s43593-022-00033-z.

摘要

Abstract

Metal halide perovskites (MHPs)

emerging as innovative and promising semiconductor materials with prominent optoelectronic properties

has been pioneering a new era of light management (ranging from emission

absorption

modulation

to transmission) for next-generation optoelectronic technology. Notably

the exploration of fundamental characteristics of MHPs and their devices is the main research theme during the past decade

while in the next decade

it will be primarily critical to promote their implantation in the next-generation optoelectronics. In this review

we first retrospect the historical research milestones of MHPs and their optoelectronic devices. Thereafter

we introduce the origin of the unique optoelectronic features of MHPs

based on which we highlight the tunability of these features via regulating the phase

dimensionality

composition

and geometry of MHPs. Then

we show that owing to the convenient property control of MHPs

various optoelectronic devices with target performance can be designed. At last

we emphasize on the revolutionary applications of MHPs-based devices on the existing optoelectronic systems. This review demonstrates the key role of MHPs played in the development of modern optoelectronics

which is expected to inspire the novel research directions of MHPs and promote the widespread applications of MHPs in the next-generation optoelectronics.

关键词

Keywords

Metal halide perovskitesOptoelectronic characteristicsOptoelectronic devicesRevolutionary applications

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