Lead halide perovskite sensitized WSe2 photodiodes with ultrahigh open circuit voltages
Lead halide perovskite sensitized WSe2 photodiodes with ultrahigh open circuit voltages
- Affiliations：
Department of Materials Science and Engineering, University of California, Los Angeles, CA, USA
Department of Physics, Sungkyunkwan University, Suwon, Republic of Korea
Department of Chemistry and Biochemistry, University of California, Los Angeles, CA, USA
Present Address: Materials Science and Technology Division, U.S. Naval Research Laboratory, Washington, DC, USA
- Author bio：
*Dae Joon Kangdjkang@skku.edu
Yu Huangyhuang@seas.ucla.edu
Xiangfeng Duanxduan@chem.ucla.edu
- Funds：the Office of Naval Research(N00014-22-1-2631);the MOTIE(Ministry of Trade, Industry, and Energy);the Fostering Global Talents for Innovative Growth Program(P0008746);the Korea Institute for Advancement of Technology (KIAT)
DOI：10.1186/s43593-023-00040-8
中图分类号：纸质出版日期：2023，
网络出版日期：2023-04-10，
收稿日期：2022-11-18，
修回日期：2023-01-18，
录用日期：2023-02-14
- Accepted：
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Lead halide perovskite sensitized WSe2 photodiodes with ultrahigh open circuit voltages[J]. 光：快讯（英文）, 2023,3(1).
Sung-Joon Lee, Hung-Chieh Cheng, Yiliu Wang, et al. Lead halide perovskite sensitized WSe2 photodiodes with ultrahigh open circuit voltages[J]. eLight, 2023,3(1).
Lead halide perovskite sensitized WSe2 photodiodes with ultrahigh open circuit voltages[J]. 光：快讯（英文）, 2023,3(1). DOI： 10.1186/s43593-023-00040-8.
Sung-Joon Lee, Hung-Chieh Cheng, Yiliu Wang, et al. Lead halide perovskite sensitized WSe2 photodiodes with ultrahigh open circuit voltages[J]. eLight, 2023,3(1). DOI： 10.1186/s43593-023-00040-8.
摘要
Abstract
Two-dimensional semiconductors (2DSCs) have attracted considerable interests for optoelectronic devices
but are often plagued by the difficulties in tailoring the charge doping type and poor optical absorption due to their atomi-cally thin geometry. Herein
we report a methylammonium lead iodide perovskite (CH
3
NH
3
PbI
3
)/2DSC heterojunction device
in which the electric-field controllable ion migration in the perovsk
ite layer is exploited to induce reversible electron- and hole-doping effects in the underlying monolayer tungsten diselenide (WSe
2
) to form a programmable p-n photodiode. At the same time
the CH
3
NH
3
PbI
3
layer functions as a highly efficient sensitization layer to greatly boost the optical absorption and external quantum efficiency (EQE) of the resulting photodiode. By asymmetrically poling the perovskite layer
gold-contacted CH
3
NH
3
PbI
3
/WSe
2
devices show a switchable open circuit voltage up to 0.78 V
along with a high EQE of 84.3%. The integration of tunable graphene-contacts further improves the photodiode performance to achieve a highest open circuit voltage of 1.08 V and a maximum EQE of 91.3%
greatly exceeding those achieved previously in 2DSC lateral diodes. Our studies establish a non-invasive approach to switch optoelectronic functions and open up a new avenue toward high-performance reconfigurable optoelectronic devices from 2DSCs.
关键词
Keywords
Electrostatic dopingProgrammable optoelectronic devicesLead halide perovskiteTwo-dimensional materialsIon migrationPhotodiodes
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